PhD, Electrical Engineering_Solid State, University of Southern California, 1973 - 1978
MSEE, Electrical Engineering_Solid State, University of Southern California, 1973 - 1978
BS, Electrical Engineering, University of Notre Dame, 1971
Kozak, J.P., Barchowsky, A., Hontz, M.R., Koganti, N.B., Stanchina, W.E., Reed, G.E., Mao, Z.H., & Khanna, R. (2020). An Analytical Model for Predicting Turn-ON Overshoot in Normally-OFF GaN HEMTs. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 8(1), 99-110.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/JESTPE.2019.2947152.
Barchowsky, A., Kozak, J.P., Reed, G.F., Stanchina, W.E., & Grainger, B.M. (2019). A 2kW, High Power-Density (100W/in3), GaN-Based, Modular Multilevel Converter for Variable Speed Drive Applications in DC Systems. NAVAL ENGINEERS JOURNAL, 131(1), 117-123.
Khanna, R., Barchowksy, A., Amrhein, A., Stanchina, W., Reed, G., & Mao, Z.H. (2016). A Linear Model for Characterizing Transient Behaviour in Wide Bandgap Semiconductor-based Switching Circuits. International Journal of Automation and Power Engineering, 5(0), 1.Science and Engineering Publishing Company. doi: 10.14355/ijape.2016.05.001.
Khanna, R., Zhang, Q., Stanchina, W.E., Reed, G.F., & Mao, Z.H. (2014). Maximum Power Point Tracking Using Model Reference Adaptive Control. IEEE TRANSACTIONS ON POWER ELECTRONICS, 29(3), 1490-1499.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/TPEL.2013.2263154.
Kim, J.J., Lim, J.H., Yang, J.W., & Stanchina, W. (2014). Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 65(3), 421-424.Korean Physical Society. doi: 10.3938/jkps.65.421.
Hakala, J.A., Stanchina, W., Soong, Y., & Hedges, S. (2011). Influence of frequency, grade, moisture and temperature on Green River oil shale dielectric properties and electromagnetic heating processes. FUEL PROCESSING TECHNOLOGY, 92(1), 1-12.Elsevier. doi: 10.1016/j.fuproc.2010.08.016.
Liu, L., Stanchina, W.E., & Li, G. (2009). Effects of semiconducting and metallic single-walled carbon nanotubes on performance of bulk heterojunction organic solar cells. APPLIED PHYSICS LETTERS, 94(23), 233309.AIP Publishing. doi: 10.1063/1.3153514.
Mokhtari, M., Fields, C., Rajavel, R.D., Sokolich, M., Jensen, J.F., & Stanchina, W.E. (2003). 100+GHz static divide-by-2 circuit in InP-DHBT technology. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 38(9), 1540-1544.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/JSSC.2003.815921.
Müllrich, J., Thurner, H., Müllner, E., Jensen, J.F., Stanchina, W.E., Kardos, M., & Rein, H.M. (2000). High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 35(9), 1260-1265.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/4.868033.
Raghavan, G., Sokolich, M., & Stanchina, W.E. (2000). Indium phosphide ICs unleash the high-frequency spectrum. IEEE SPECTRUM, 37(10), 47-52.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/6.873917.
Stanchina, W.E., & Lam, J.E. (2000). Compound Semiconductor Device Structures. In Handbook of Semiconductor Technology Set. (pp. 391-406).Wiley. doi: 10.1002/9783527619290.ch8a.
Stanchina, W.E., & Lam, J.E. (2000). Compound Semiconductor Device Structures. In Handbook of Semiconductor Technology. 2, (pp. 391-406).Wiley. doi: 10.1002/9783527621828.ch8.
Datta, S., Roenker, K.P., Cahay, M.M., & Stanchina, W.E. (1999). Implications of hole vs electron transport properties for high speed Pnp heterojunction bipolar transistors. SOLID-STATE ELECTRONICS, 43(1), 73-79.Elsevier. doi: 10.1016/S0038-1101(98)00237-8.
Yung, M., Jensen, J., Walden, R., Rodwell, M., Raghavan, G., Elliott, K., & Stanchina, W. (1999). Highly integrated InP HBT optical receivers. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 34(2), 219-227.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/4.743780.
Chow, D.H., Hafizi, M., Stanchina, W.E., Roth, J.A., Zinck, J.J., Dubray, J.J., & Dunlap, H.L. (1998). Monolithic integration of resonant tunneling diodes and heterojunction bipolar transistors on patterned InP substrates. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 16(3), 1413-1416.American Vacuum Society. doi: 10.1116/1.589957.
Datta, S., Shi, S., Roenker, K.P., Cahay, M.M., & Stanchina, W.E. (1998). Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(8), 1634-1643.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.704357.
Mokhtari, M., Westergren, U., Willen, B., Swahn, T., & Stanchina, W.E. (1998). InP-HBT-based VHSICs and OEICs for optical fiber communication systems. 1998 IEEE International Conference on Electronics, Circuits and Systems. Surfing the Waves of Science and Technology (Cat. No.98EX196), 1, 55-58 vol.1.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/icecs.1998.813270.
Kiziloglu, K., Yung, M.W., Sun, H.C., Thomas, S., Kardos, M.B., Walden, R.H., Brown, J.J., & Stanchina, W.E. (1997). InP-based mixed device (HEMT/HBT) technology on planar substrate for high performance mixed-signal and optoelectronic circuits. ELECTRONICS LETTERS, 33(24), 2065-2066.Institution of Engineering and Technology (IET). doi: 10.1049/el:19971384.
Mokhtari, M., Swahn, T., Walden, R.H., Stanchina, W.E., Kardos, M., Juhola, T., Schuppener, G., Tenhunen, H., & Lewin, T. (1997). InP-HBT chip-set for 40-Gb/s fiber optical communication systems operational at 3 V. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 32(9), 1371-1383.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/4.628743.
De Los Santos, H.J., Nardi, D.D., Hargrove, K.L., Hafizi, M., & Stanchina, W.E. (1996). High-Efficiency InP-based DHBT Active Frequency Multipliers for Wireless Communications. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 44(7), 1165-1167.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/22.508655.
Shi, S., Roenker, K.P., Kumar, T., Cahay, M.M., & Stanchina, W.E. (1996). Simulation of PNP InAlAs/InGaAs heterojunction bipolar transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 43(9), 1466-1467.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.535334.
Conklin, T., Naugle, S., Shi, S., Frimel, S.M., Roenker, K.P., Kumar, T., Cahay, M.M., & Stanchina, W.E. (1995). Inclusion of tunneling and ballistic transport effects in an analytical approach to modeling of NPN InP-based heterojunction bipolar transistors. SUPERLATTICES AND MICROSTRUCTURES, 18(1), 21-32.Elsevier. doi: 10.1006/spmi.1995.1084.
Hafizi, M., Stanchina, W.E., Williams, F., & Jensen, J.F. (1995). Reliability of InP-Based HBT IC technology for high-speed, low-power applications. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 43(12), 3048-3054.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/22.475673.
Kumar, T., Cahay, M., Shi, S., Roenker, K., & Stanchina, W.E. (1995). A hybrid model to calculate the forward delay time of heterojunction bipolar transistors. SUPERLATTICES AND MICROSTRUCTURES, 18(1), 1-8.Elsevier. doi: 10.1006/spmi.1995.1082.
KUMAR, T., CAHAY, M., SHI, S., ROENKER, K., & STANCHINA, W.E. (1995). LIMIT OF VALIDITY OF THE THERMIONIC-FIELD-EMISSION TREATMENT OF ELECTRON INJECTION ACROSS EMITTER-BASE JUNCTIONS IN ABRUPT HETEROJUNCTION BIPOLAR-TRANSISTORS. JOURNAL OF APPLIED PHYSICS, 77(11), 5786-5792.AIP Publishing. doi: 10.1063/1.359224.
Shi, S., Roenker, K.P., Kumar, T., Cahay, M.M., & Stanchina, W.E. (1995). Simulation study of InP-based PNP heterojunction bipolar transistors and incorporation of nonclassical effects. SUPERLATTICES AND MICROSTRUCTURES, 18(1), 9-19.Elsevier. doi: 10.1006/spmi.1995.1083.
COWLES, J., GUTIERREZAITKEN, A.L., BHATTACHARYA, P., HADDAD, G.I., NICHOLS, D., DUTTA, N.K., & STANCHINA, W.E. (1994). 7.1-GHZ BANDWIDTH MONOLITHICALLY INTEGRATED IN0.53GA0.47AS/IN0.52AL0.48AS PIN-HBT TRANSIMPEDANCE PHOTORECEIVER (VOL 6, PG 963, 1994). IEEE PHOTONICS TECHNOLOGY LETTERS, 6(11), 1395.
HAFIZI, M., LIU, T., STANCHINA, W.E., RENSCH, D.B., LUI, M., & BROWN, Y.K. (1994). IMPORTANCE OF COLLECTOR DOPING IN THE DESIGN OF ALINAS/GAINAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS. APPLIED PHYSICS LETTERS, 64(24), 3261-3263.AIP Publishing. doi: 10.1063/1.111303.
HAFIZI, H., LIU, T., RENSCH, D.B., & STANCHINA, W.E. (1993). EFFECTS OF COLLECTOR DOPING ON DC AND RF PERFORMANCE OF ALINAS/GAINAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS. IEEE TRANSACTIONS ON ELECTRON DEVICES, 40(11), 2122-2123.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.239799.
HAFIZI, M., METZGER, R.A., & STANCHINA, W.E. (1993). STABILITY OF BERYLLIUM-DOPED COMPOSITIONALLY GRADED AND ABRUPT ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS. APPLIED PHYSICS LETTERS, 63(1), 93-95.AIP Publishing. doi: 10.1063/1.109708.
HAFIZI, M., METZGER, R.A., & STANCHINA, W.E. (1993). DEPENDENCE OF DC CURRENT GAIN AND FMAX OF ALINAS/GAINAS HBTS ON BASE SHEET RESISTANCE. IEEE ELECTRON DEVICE LETTERS, 14(7), 323-325.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/55.225560.
HAFIZI, M., STANCHINA, W.E., METZGER, R.A., JENSEN, J.F., & WILLIAMS, F. (1993). RELIABILITY OF ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS. IEEE TRANSACTIONS ON ELECTRON DEVICES, 40(12), 2178-2185.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.249462.
HAFIZI, M., STANCHINA, W.E., METZGER, R.A., MACDONALD, P.A., & WILLIAMS, F. (1993). TEMPERATURE-DEPENDENCE OF DC AND RF CHARACTERISTICS OF ALINAS/GAINAS HBTS. IEEE TRANSACTIONS ON ELECTRON DEVICES, 40(9), 1583-1588.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.231562.
METZGER, R.A., HAFIZI, M., STANCHINA, W.E., LIU, T., WILSON, R.G., & MCCRAY, L.G. (1993). CONFINEMENT OF HIGH BE DOPING LEVELS IN ALINAS/GAINAS NPN HETEROJUNCTION BIPOLAR-TRANSISTORS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH. APPLIED PHYSICS LETTERS, 63(10), 1360-1362.AIP Publishing. doi: 10.1063/1.109677.
HAFIZI, M., JENSEN, J.F., METZGER, R.A., STANCHINA, W.E., RENSCH, D.B., & ALLEN, Y.K. (1992). 39.5-GHZ STATIC FREQUENCY-DIVIDER IMPLEMENTED IN ALINAS/GAINAS HBT TECHNOLOGY. IEEE ELECTRON DEVICE LETTERS, 13(12), 612-614.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/55.192861.
HAFIZI, M., METZGER, R.A., STANCHINA, W.E., RENSCH, D.B., JENSEN, J.F., & HOOPER, W.W. (1992). THE EFFECTS OF BASE DOPANT DIFFUSION ON DC AND RF CHARACTERISTICS OF INGAAS/INALAS HETEROJUNCTION BIPOLAR-TRANSISTORS. IEEE ELECTRON DEVICE LETTERS, 13(3), 140-142.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/55.144990.
METZGER, R.A., HAFIZI, M., WILSON, R.G., STANCHINA, W.E., JENSEN, J.F., & MCCRAY, L.G. (1992). BE DIFFUSION AT THE EMITTER-BASE JUNCTION OF GRADED ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 10(6), 2347-2350.American Vacuum Society. doi: 10.1116/1.586065.
FERRO, R.J., WILSON, R.G., JENSEN, J.F., RENSCH, D.B., STANCHINA, W.E., METZGER, R.A., PIERCE, M.W., KARGODORIAN, T.V., & ALLEN, Y.K. (1991). EMITTER INJECTION AND COLLECTOR CURRENT IDEALITY IN ABRUPT HETEROJUNCTION A1INAS/GAINAS HBTS. SOLID-STATE ELECTRONICS, 34(12), 1319-1324.Elsevier. doi: 10.1016/0038-1101(91)90024-S.
JENSEN, J.F., STANCHINA, W.E., METZGER, R.A., LIU, T., KARGODORIAN, T.V., PIERCE, M.W., & MCCRAY, L.G. (1991). 36-GHZ STATIC DIGITAL FREQUENCY-DIVIDERS IN ALINAS-GAINAS HBT TECHNOLOGY. IEEE TRANSACTIONS ON ELECTRON DEVICES, 38(12), 2719-2720.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.158756.
JENSEN, J.F., STANCHINA, W.E., METZGER, R.A., RENSCH, D.B., LOHR, R.F., QUEN, R.W., PIERCE, M.W., ALLEN, Y.K., & LOU, P.F. (1991). ALINAS GAINAS HBT IC TECHNOLOGY. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 26(3), 415-421.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/4.75028.
KING, H.X.L., WOO, J.C.S., JENSEN, J.F., STANCHINA, W.E., FERRO, R.J., & METZGER, R.A. (1991). NUMERICAL AND EXPERIMENTAL STUDIES OF THE INTRINSIC PERFORMANCE OF ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS. JOURNAL OF APPLIED PHYSICS, 69(8), 4426-4430.AIP Publishing. doi: 10.1063/1.348369.
METZGER, R.A., BROWN, A.S., STANCHINA, W.E., LUI, M., WILSON, R.G., KARGODORIAN, T.V., MCCRAY, L.G., & HENIGE, J.A. (1991). GROWTH AND CHARACTERIZATION OF LOW-TEMPERATURE ALINAS. JOURNAL OF CRYSTAL GROWTH, 111(1-4), 445-449.Elsevier. doi: 10.1016/0022-0248(91)91017-5.
RODWELL, M., JENSEN, J.F., STANCHINA, W.E., METZGER, R.A., RENSCH, D.B., PIERCE, M.W., KARGODORIAN, T.V., & ALLEN, Y.K. (1991). 33-GHZ MONOLITHIC CASCODE ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTOR FEEDBACK-AMPLIFIER. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 26(10), 1378-1382.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/4.90089.
STANCHINA, W.E., METZGER, R.A., LIU, T., LOU, P.F., JENSEN, J.F., PIERCE, M.W., & MCCRAY, L.G. (1991). 60-GHZ ALINAS/GAINAS/INP DHBTS GROWN BY MOVPE + MBE. IEEE TRANSACTIONS ON ELECTRON DEVICES, 38(12), 2720.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.158757.
MISHRA, U.K., JENSEN, J.F., RENSCH, D.B., BROWN, A.S., STANCHINA, W.E., TREW, R.J., PIERCE, M.W., & KARGODORIAN, T.V. (1989). SELF-ALIGNED A1INAS-GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CIRCUITS. IEEE ELECTRON DEVICE LETTERS, 10(10), 467-469.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/55.43102.
CROWELL, C.R., STANCHINA, W.E., & VAIDYANATHAN, K.V. (1988). CHARACTERIZATION OF ENHANCED BARRIER SCHOTTKY DIODES - IMPURITY PROFILING IN THE PUNCH-THROUGH REGION. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 135(6), 1543-1547.The Electrochemical Society. doi: 10.1149/1.2096050.
SUNDERLAND, D.A., HADEN, J.M., DZURKO, K.M., STANCHINA, W.E., LEE, H.C., DANNER, A.D., & DAPKUS, P.D. (1988). A FULLY PLANAR P-N-P HETEROJUNCTION BIPOLAR-TRANSISTOR. IEEE ELECTRON DEVICE LETTERS, 9(3), 116-118.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/55.2060.
STANCHINA, W.E., CLARK, M.D., VAIDYANATHAN, K.V., JULLENS, R.A., & CROWELL, C.R. (1987). EFFECTS AND CHARACTERIZATION OF ION-IMPLANTATION ENHANCED GAAS SCHOTTKY BARRIERS. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 134(4), 967-971.The Electrochemical Society. doi: 10.1149/1.2100605.
HAHN, S.J., STANCHINA, W.E., GAJDA, W.J., & VOGELHUT, P. (1986). THE EFFECT OF GROWTH-RATE VARIATION ON THE CONDUCTIVITY AND MORPHOLOGY OF POLYPYRROLE THIN-FILMS. JOURNAL OF ELECTRONIC MATERIALS, 15(3), 145-149.Springer Nature. doi: 10.1007/BF02655328.
STANCHINA, W.E., & WHELAN, J.M. (1985). DESIGN AND PERFORMANCE OF A CALCIA-STABILIZED ZIRCONIA ELECTROLYTIC CELL AS A MONITOR FOR SMALL AMOUNTS OF H2O IN H2 STREAMS. REVIEW OF SCIENTIFIC INSTRUMENTS, 56(7), 1448-1451.AIP Publishing. doi: 10.1063/1.1138502.
STANCHINA, W.E., WHELAN, J.M., & CHALERMTIRAGOOL, K. (1984). LOW-TEMPERATURE NATIVE OXIDE REDUCTION FROM GAAS-SURFACES. In Lampert, C.M., & Sadana, D.K. (Eds.). PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 463, 77-84.SPIE, the international society for optics and photonics. doi: 10.1117/12.941351.
IRELAND, P.J., JAMJOUM, O., KAZMERSKI, L.L., AHRENKIEL, R.K., RUSSELL, P.E., STANCHINA, W., & WAGER, J.F. (1983). SURFACE AND INTERFACE ANALYSIS OF GAAS-OXYFLUORIDES. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1(2), 653-656.American Vacuum Society. doi: 10.1116/1.572202.
STANCHINA, W.E., & WHELAN, J.M. (1983). SOLUBILITY OF GAAS IN AU-GE EUTECTIC MELTS. SOLID-STATE ELECTRONICS, 26(8), 817-819.Elsevier. doi: 10.1016/0038-1101(83)90049-7.
Barchowsky, A., Kozak, J.P., Grainger, B.M., Stanchina, W.E., & Reed, G.F. (2017). A GaN-Based Modular Multilevel DC-DC Converter for High-Density Anode Discharge Power Modules. In 2017 IEEE Aerospace Conference, (pp. 1-10).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/aero.2017.7943768.
Barchowsky, A., Kozak, J.P., Hontz, M.R., Stanchina, W.E., Reed, G.F., Mao, Z.H., & Khanna, R. (2017). Analytical and Experimental Optimization of External Gate Resistance for Safe Rapid Turn on of Normally off GaN HFETs. In 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), (pp. 1958-1963).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/apec.2017.7930966.
Erickson, J.R., Tan, S., & Stanchina, W.E. (2017). Nanofabrication of $\beta$-Ga2O3 Nanowires for Device Implementation. In 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), (pp. 485-488).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/nano.2017.8117336.
Kline, D., Parshook, N., Johnson, A., Stine, J.E., Stanchina, W., Brunvand, E., & Jones, A.K. (2017). Sustainable IC Design and Fabrication. In 2017 Eighth International Green and Sustainable Computing Conference (IGSC), 2017-October, (pp. 1-8).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/igcc.2017.8323572.
Barchowsky, A., Kozak, J., Grainger, B.M., Reed, G., & Stanchina, W. (2016). A 2kW, High Power Density (100W/in3), Gallium Nitride Based, Parallel Modular Multilevel Inverter. In Proceedings of the 2016 ASNE Advanced Machinery Technology Symposium.Philadelphia, PA.
Kozak, J.P., Barchowsky, A., Grainger, B., Turner, C., Delancey, R., Reed, G., & Stanchina, W. (2016). Design and Manufacturability of a High Power Density M2C Inverter. In 2016 International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM), (pp. 1-15).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/3dpeim.2016.7570559.
Khanna, R., Hughes, B., StanchinEa, W., Chu, R., Boutros, K., & Reed, G. (2014). Modeling and Characterization of a 300 V GaN Based Boost Converter with 96% Efficiency at 1 MHz. In 2014 IEEE Energy Conversion Congress and Exposition (ECCE), (pp. 92-99).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/ecce.2014.6953380.
Khanna, R., Amrhein, A., Stanchina, W., Reed, G., & Mao, Z.H. (2013). An Analytical Model for Evaluating the Influence of Device Parasitics on Cdv/dt Induced False Turn-on in SiC MOSFETs. In 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), (pp. 518-525).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/apec.2013.6520259.
Khanna, R., Amrhein, A., Stanchina, W., Reed, G., & Mao, Z.H. (2013). An analytical model for evaluating the influence of device parasitics on Cdv/dt induced false turn-on in SiC MOSFETs. (pp. 518-525). doi: 10.1109/APEC.2013.6520259.
Khanna, R., Stanchina, W., & Reed, G. (2012). Effects of Parasitic Capacitances on Gallium Nitride Heterostructure Power Transistors. In 2012 IEEE Energy Conversion Congress and Exposition (ECCE), 1, (pp. 1489-1495).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/ecce.2012.6342638.
Khanna, R., Stanchina, W., & Vats, A. (2011). Low Cost, Battery Powered Optical Detection of Pathogens. In Optics InfoBase Conference Papers, (p. jwa119).Optica Publishing Group. doi: 10.1364/cleo_at.2011.jwa119.
Khanna, R., Stanchina, W., & Vats, A. (2011). Low cost, battery powered optical detection of pathogens. In Optics InfoBase Conference Papers.
Khanna, R., Stanchina, W., & Vats, A. (2011). Low cost, battery powered optical detection of pathogens. In Optics InfoBase Conference Papers.
Khanna, R., Stanchina, W., & Vats, A. (2011). Low Cost, Battery Powered Optical Detection of Pathogens. In CLEO:2011 - Laser Applications to Photonic Applications, (p. JWA119).OSA. doi: 10.1364/cleo_at.2011.jwa119.
Khanna, R., Stanchina, W., Jones, A., & Vats, A. (2011). An Inexpensive, Battery Powered and Portable Instrument for the Optical Detection of Pathogens. In 2011 IEEE/NIH Life Science Systems and Applications Workshop (LiSSA), (pp. 152-154).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/lissa.2011.5754181.
Reed, G.F., & Stanchina, W.E. (2010). Smart Grid Education Models for Modern Electric Power System Engineering Curriculum. In IEEE PES General Meeting, (pp. 1-5).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/pes.2010.5589617.
Reed, G.F., & Stanchina, W.E. (2010). The Power and Energy Initiative at the University of Pittsburgh: Addressing the Aging Workforce Issue through Innovative Education, Collaborative Research, and Industry Partnerships. In IEEE PES T&D 2010, (pp. 1-7).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/tdc.2010.5484264.
Liu, L., Stanchina, W.E., & Li, G. (2009). Performance Analysis of Bulk Heterojunction Solar Cells Fabricated by Polymer: Fullerene: Carbon-Nanotube Composites. In 2009 IEEE Nanotechnology Materials and Devices Conference, (pp. 207-211).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/nmdc.2009.5167536.
Liu, L., Stanchina, W.E., & Li, G. (2008). Enhanced Performance of Bulk Heterojunction Solar Cells Fabricated by Polymer:Fullerene: Carbon-Nanotube Composites. In 2008 8th IEEE Conference on Nanotechnology, (pp. 233-236).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/nano.2008.76.
Reed, G.F., Lovell, M.R., Shuman, L.J., & Stanchina, W.E. (2008). A Renewed Power and Energy Initiative Development at the University of Pittsburgh Swanson School of Engineering. In 2008 IEEE Power and Energy Society General Meeting - Conversion and Delivery of Electrical Energy in the 21st Century, (pp. 1-5).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/pes.2008.4596377.
Stanchina, W.E., Sokolich, M., & Elliott, K.R. (2001). Process and integration technologies for InP ICs. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials, (pp. 489-492).
Mattia, J.P., Pullela, R., Georgieu, G., Baeyens, Y., Tsai, H.S., Chen, Y.K., Dorschky, C., Von Mohrenfels, T.W., Reinhold, M., Groepper, C., Sokolich, M., Nguyen, L., & Stanchina, W. (1999). High-speed multiplexers: A 50 Gb/s 4:1 MUX in InP HBT technology. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), (pp. 189-192).
Frimel, S.M., Roenker, K.P., Stanchina, W.E., & Sun, H.C. (1998). High performance InP-based phototransistors for long wavelength, HBT-based optical receivers. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), (pp. 161-164).
Kiziloglu, K., Yung, M.W., Sun, H.C., Thomas, S., Kardos, M.B., Walden, R.H., Brown, J.J., Stanchina, W.E., Kaman, V., & Rodwell, M.J.W. (1998). InP-based high sensitivity pin/HEMT/HBT monolithic integrated optoelectronic receiver. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials, (pp. 443-446).
Sokolich, M., Docter, D.P., Brown, Y.K., Kramer, A.R., Jensen, J.F., Stanchina, W.E., Thomas, S., Fields, C.H., Ahmari, D.A., Lui, M., Martinez, R., & Duvall, J. (1998). Low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), (pp. 117-120).
Datta, S., Shi, S., Roenker, K.P., Cahay, M.M., & Stanchina, W.E. (1997). Numerical modeling and design of Pnp InAlAs-InGaAs heterojunction bipolar transistors. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials, (pp. 392-395).
Jensen, J.F., Raghavan, G., Stanchina, W., Walden, R.H., Hafizi, M., C.-Sun, H., Kardos, M., Brown, Y.K., & Montes, M.E. (1997). InP HBT continuous time 2nd order bandpass ΔΣ modulator and 1-to-16 DEMUX IC with center frequency continuously programmable from 0 to 70 Mhz. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials, (pp. 237-240).
Mokhtari, M., Juhola, T., Kerzar, B., Schuppener, G., Westergren, U., Tenhunen, H., Swahn, T., Lewin, T., Stanchina, W.E., & Walden, R. (1997). Low voltage, broad-and narrowband microwave differential amplifiers for 40 Gb/s-demonstrator applications in InP-HBT. In Proceedings - IEEE International Symposium on Circuits and Systems, 1, (pp. 149-152).
Yung, M., Jensen, J., Raghavan, G., Rodwell, M., Hafizi, M., Walden, R., Elliott, K., Kardos, M., Brown, Y., Montes, M., Sun, H., & Stanchina, W. (1997). InP HBT low power receiver IC integrating AGC amplifier, clock recovery circuit and demultiplexer. In IEEE-CAS Region 8 Workshop on Analog and Mixed IC Design, Proceedings, (pp. 205-207).
Yung, M., Jensen, J., Raghavan, G., Rodwell, M., Hafizi, M., Walden, R., Elliott, K., Kardos, M., Brown, Y., Montes, M., Sun, H., & Stanchina, W. (1997). InP HBT low power receiver IC integrating AGC amplifier, clock recovery circuit and demultiplexer. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit).
Gamelin, J., Goodman, M., Jackel, J., Pathak, B., Chang, G.K., Tomlinson, W.J., Cordell, R., Zah, C.E., Lee, T.P., Brackett, C., Dreze, C., Pollex, D., Sitch, J., Willemson, H., Pedrotti, K., Wang, K.C., Walden, R., Stanchina, W., Fritz, D., Ade, R., Hobbs, R., Haigh, R., McCammon, K., & Lennon, W. (1996). 8-channel reconfigurable WDM networking demonstration with wavelength translation and electronic multicasting at 2.5 Gbit/s. In Conference on Optical Fiber Communication, Technical Digest Series, 1996-January, (pp. 443-446).
Meneghesso, G., Neviani, A., Parisotto, R., Vendrame, L., Hafizi, M., Stanchina, W.E., Canali, C., & Zanoni, E. (1996). Measurement of the electron ionization coefficient temperature dependence in InGaAs-based heterojunction bipolar transistors. In European Solid-State Device Research Conference, (pp. 447-450).
Stanchina, B. (1996). Opening comments. In Short Course High Frequency Design for Communications, (pp. 1-4).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/hfdc.1996.864090.
Swahn, T., Lewin, T., Mokhtari, M., Tenhunen, H., Walden, R., & Stanchina, W.E. (1996). 40 Gb/s, 3 volt InP HBT ICs for a fiber optic demonstrator system. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), (pp. 125-128).
Hafizi, M., Stanchina, W.E., & Sun, H.C. (1995). Submicron fully self-aligned AlInAs/GaInAs HBTs for low-power applications. In Annual Device Research Conference Digest, (pp. 80-81).
Hafizi, M., Stanchina, W.E., Williams, F., & Jensen, J.F. (1995). Reliability of InP-based HBT IC technology for high-speed, low-power applications. In Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, (pp. 111-114).
Stanchina, W.E., Jensen, J.F., Walden, R.H., Hafizi, M., Sun, H.C., Liu, T., Raghavan, G., Elliott, K.E., Kardos, M., Schmitz, A.E., Brown, Y.K., Montes, M.E., & Yung, M. (1995). InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronics ICs. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), (pp. 31-34).
Walden, R.H., Xie, Y.M., Stanchina, W.E., Sun, H.C., Hafizi, M., Brown, Y.K., Kardos, M., Schmitz, A.E., Pikulski, J., Kramer, A.R., Chang, G.K., Cordell, R., Dreze, C., Sitch, J., Pollex, D., & et al. (1995). InP-based HBT 1×8 OEIC array for a WDM network. In LEOS Summer Topical Meeting.
Jensen, J.F., Cosand, A.E., Stanchina, W.E., Walden, R.H., Lui, T., Brown, Y.K., Montes, M., Elliott, K., & Kirkpatrick, C.G. (1994). Double heterostructure InP HBT technology for high resolution A/D converters. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), (pp. 224-227).
Walden, R.H., Stanchina, W.E., Metzger, R.A., Loo, R.Y., Schaffner, J., Pierce, M.W., Brown, Y.K., Williams, F., Jones, V., Pikulski, J., Rodwell, M., Giboney, K., Mullen, R.A., & Jensen, J.F. (1994). Broadband optoelectronic integrated receiver front-ends comprising InP-based heterojunction bipolar transistors and base-collector photodiodes. In Conference on Optical Fiber Communication, Technical Digest Series, 4, (p. 33).
Hafizi, M., Liu, T., Macdonald, P.A., Lui, M., Chu, P., Rensch, D.B., Stanchina, W.E., & Wu, C.S. (1993). High-performance microwave power AlINAs/GaInAs/InP double heterjounction bipolar transistors with compositionally graded base-collector junction. In Technical Digest - International Electron Devices Meeting, (pp. 791-794).
Hafizi, M., Liu, T., Rensch, D.B., & Stanchina, W.E. (1993). Effects of collector doping on dc and rf performance of AiInAs/GaInAs/InP double heterojunction bipolar transistors. In 51st Annual Device Research Conference, Part F146191, (pp. 87-88).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/drc.1993.1009593.
Stanchina, W.E., Liu, T., Rensch, D.B., MacDonald, P., Hafizi, M., Hooper, W.W., Lui, M., Allen, Y.K., Kargodorian, T.V., Wong-Queen, R., & Williams, F. (1993). Performance of AllnAs/GaInAs/InP microwave DHBTs. In 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials, (pp. 17-20).
Stanchina, W.E., Metzger, R.A., Jensen, J.F., Hafizi, M., & Rensch, D.B. (1993). Fabrication, Performance, and Reliabilityof InP-Based HBTs. In MRS Advances, 300(1), (pp. 29-40).Springer Nature. doi: 10.1557/proc-300-29.
Stanchina, W.E., Metzger, R.A., Pierce, M.W., Jensen, J.F., McCray, L.G., Wong-Quen, R., & Williams, F. (1993). Monolithic fabrication of NPN PNP AlInAs/GaInAs HBTs. In 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials, (pp. 569-571).
Hafizi, M., Stanchina, W.E., Metzger, R.A., Jensen, J.F., Rensch, D.B., Delaney, M.J., Greiling, P.T., & Williams, F. (1992). Reliability of high-performance AlInAs/GaInAs heterojunction bipolar transistors under forward bias and temperature stress. In International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217), 1992-December, (pp. 71-74).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/iedm.1992.307311.
Jensen, J.F., Hafizi, M., Stanchina, W.E., Metzger, R.A., & Rensch, D.B. (1992). 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology. In GaAs IC Symposium Technical Digest 1992, (pp. 101-104).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/gaas.1992.247213.
Jensen, J.F., Stanchina, W.E., Metzger, R.A., Hafizi, M.E., Liu, T., & Rensch, D.B. (1992). High-speed InP-based HBT integrated circuits. In Proceedings of SPIE - The International Society for Optical Engineering, 1680, (pp. 2-11).
METZGER, R.A., LIU, T., STANCHINA, W.E., WILSON, R.G., JENSEN, J.F., MCCRAY, L.G., PIERCE, M.W., KARGODORIAN, T.V., ALLEN, Y.K., LOU, P.F., & MISHRA, U.K. (1992). CONTROL OF BERYLLIUM DIFFUSION IN ALINAS/GAINAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS THROUGH USE OF LOW-TEMPERATURE GAINAS. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 10(2), (pp. 859-862).American Vacuum Society. doi: 10.1116/1.586136.
Nystrom, S.C., Peterson, W.R., Nayar, P.S., Walden, R.H., Stanchina, W.E., & Hooper, W.W. (1992). InP-based heterostructure device technology for ultracold readout applications. In Fossum, E.R. (Ed.). In Proceedings of SPIE--the International Society for Optical Engineering, 1684, (pp. 139-147).SPIE, the international society for optics and photonics. doi: 10.1117/12.60502.
Stanchina, W.E., Jensen, J.F., Metzger, R.A., Hafizi, M.E., & Rensch, D.B. (1992). Status and potential of AlInAs/GaInAs/InP HBT ICs. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, (pp. 434-437).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/iciprm.1992.235571.
Jensen, J.E., Stanchina, W.E., Metzger, R.A., Rensch, D.B., Ferro, R.J., Lou, P.F., Pierce, M.W., Kargodorian, T.V., & Allen, Y.K. (1990). Improved AlInAs/GaInAs HBTs for high-speed circuits. In Eastman, L.F. (Ed.). In Proceedings of SPIE--the International Society for Optical Engineering, 1288, (pp. 57-68).SPIE, the international society for optics and photonics. doi: 10.1117/12.20907.
Jensen, J.F., Stanchina, W.E., Metzger, R.A., Rensch, D.B., Allen, Y.K., Pierce, M.W., & Kargodorian, T.V. (1990). High speed dual modulus dividers using AlInAs-GaInAs HBT IC technology. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), (pp. 41-44).
Rodwell, M., Jensen, J.F., Stanchina, W.E., Metzger, R.A., Rensch, D.B., Pierce, M.W., Kargodorian, T.V., & Allen, Y.K. (1990). 33 GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifier. (pp. 252-255).
Stanchina, W.E., Metzger, R.A., Jensen, J.F., Rensch, D.B., Pierce, M.W., Delaney, M.J., Wilson, R.G., Kargodorian, T.V., & Allen, Y.K. (1990). Improved high frequency performance of AlInAs/GaInAs HBTs through use of low temperature GaInAs. In International Conference on Indium Phosphide and Related Materials, (pp. 13-16).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/iciprm.1990.202978.
Efron, U., Stanchina, W.E., Rouse, I.D., Wu, W.Y., Goodwin, N.W., Reif, P.G., Wu, S.T., & Welkowsky, M.S. (1988). Schottky diode liquid crystal light valve.
CROWELL, C.R., STANCHINA, W.E., & VAIDYANATHAN, K.V. (1987). IONIZED DOPANT PROFILING OF THIN COUNTER-DOPED GA-AS SURFACE-LAYERS BY ELECTRICAL MEASUREMENTS. In JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 134(4), (p. C233).
STANCHINA, W.E., CROWELL, C.R., CLARK, M.D., VAIDYANATHAN, K.V., & JULLENS, R.A. (1985). EFFECTS AND CHARACTERIZATION OF ION-IMPLANTATION ENHANCED GAAS SCHOTTKY BARRIERS. In JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 132(9), (p. C405).
KWOR, R., KWONG, D.L., STANCHINA, W., & ARAUJO, A. (1983). CW INCOHERENT-LIGHT ANNEALING FOR VLSI APPLICATION. In JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 130(8), (p. C328).
Stanchina, W.E. (1991). Semiconductor Arrangement Having Dissimilar Laterally Spaced Layer Structures, and Process for Fabricating the Same. 5,049,522.