headshot

Mahmoud El Nokali

Associate Professor
Electrical and Computer Engineering

about

(1998) Outstanding Teacher in Electrical Engineering Award.

(1996) Outstanding Professor Award.

(1990) Outstanding Teacher in Electrical Engineering Award.

(1989) Outstanding Teacher in Electrical Engineering Award.

(1988) University of Pittsburgh Chancellor's Distinguished Teaching Award.

(1988) Outstanding Teacher in Electrical Engineering Award.

(1987) Outstanding Teacher in Electrical Engineering Award.

(1987) Outstanding Research Publication in Electrical Engineering.

(1986) The Beitle Veltri Memorial Engineering Teaching Award.

(1985 - 1986) University of Pittsburgh HKN Chapter Award for E. E. Professor of the year.

(1984 - 1985) University of Pittsburgh HKN Chapter Award for Excellence in Teaching.

(1983 - 1984) University of Pittsburgh HKN Chapter Award for Outstanding Electrical Engineering Professor.

(1982 - 1983) University of Pittsburgh HKN Award for Outstanding New Teacher.

(1980 - 1981) Natural Sciences and Engineering Research Council of Canada (NSERC) Post Doctoral Fellowship.

(1977 - 1980) Bourse d'excellence de l'Enseignement superieur (Gouvernement du Quebec).

(1976 - 1978) National Research Council of Canada (NRC) Postgraduate Scholarship.

(1967 - 1972) Alexandria University Undergraduate Scholarship.

PhD, Electrical Engineering, McGill University, 1980

MS in Engineering in Electircal Engineering, McGill University, Montreal, 1976

BE, Electrical Engineering, Alexandria University, 1972

Ryu, S., Lee, M., Hajji, M.A., Ahn, H., Han, D., & El Nokali, M. (2008). A transient model for insulated gate bipolar transistors (IGBTs). INTERNATIONAL JOURNAL OF ELECTRONICS, 95(4), 399-409.Informa UK Limited. doi: 10.1080/00207210801996162.

Afzal, B., Zahabi, A., Amirabadi, A., Koolivand, Y., Afzali-Kusha, A., & El Nokali, M. (2005). Analytical model for C-V characteristic of fully depleted SOI-MOS capacitors. SOLID-STATE ELECTRONICS, 49(8), 1262-1273.Elsevier BV. doi: 10.1016/j.sse.2005.06.006.

Hashemi, P., Behnam, A., Fathi, E., Afzali-Kusha, A., & El Nokali, M. (2005). 2-D modeling of potential distribution and threshold voltage of short channel fully depleted dual material gate SOI MESFET. SOLID-STATE ELECTRONICS, 49(8), 1341-1346.Elsevier BV. doi: 10.1016/j.sse.2005.06.011.

Chamas, I., & ElNokali, M.A. (2004). Automated PSpice Simulation as an Effective Design Tool in Teaching Power Electronics. IEEE Transactions on Education, 47(3), 415-421.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/te.2004.825509.

Kang, W., Ahn, H., & ElNokali, M.A. (2004). A Parameter Extraction Algorithm for an IGBT Behavioral Model. IEEE Transactions on Power Electronics, 19(6), 1365-1371.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/tpel.2004.836635.

Luo, Z., Ahn, H., & ElNokali, M.A. (2004). A Thermal Model for Insulated Gate Bipolar Transistor Module. IEEE Transactions on Power Electronics, 19(4), 902-907.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/tpel.2004.830089.

Ahn, H.K., El-Nokali, M., & Han, D.Y. (2003). An efficient algorithm for optimizing the electrical performance of HBTs. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 16(4), 353-365.Wiley. doi: 10.1002/jnm.504.

Bolouki, S., Maddah, M., Afzali-Kusha, A., & El Nokali, M. (2003). A unified I-V model for PD/FD SOI MOSFETs with a compact model for floating body effects. SOLID-STATE ELECTRONICS, 47(11), 1909-1915.Elsevier BV. doi: 10.1016/S0038-1101(03)00259-4.

Hwang, K.C., Ahn, H., Han, D.Y., & El Nokali, M. (2001). A fast numerical algorithm for heterojunction structures. INTERNATIONAL JOURNAL OF ELECTRONICS, 88(11), 1151-1159.Informa UK Limited. doi: 10.1080/00207210110085887.

Oh, H.S., & El Nokali, M. (2001). A new IGBT behavioral model. SOLID-STATE ELECTRONICS, 45(12), 2069-2075.Elsevier BV. doi: 10.1016/S0038-1101(01)00149-6.

Won, C.S., Ahn, H., Han, D.Y., & El Nokali, M.A. (1999). D.C. characteristic of MESFETs at High Temperatures. Solid-State Electronics, 43(3), 537-542.Elsevier BV. doi: 10.1016/s0038-1101(98)00308-6.

Kasemsuwan, V., & El nokali, M. (1997). A High Frequency Model for High Electron Mobility Transistors. IEEE Transactions on Microwave Theory and Techniques, 45(3), 420-427.

Kasemsuwan, V., & El Nokali, M.A. (1997). A microwave model for high electron mobility transistors. IEEE Transactions on Microwave Theory and Techniques, 45(3), 420-427.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/22.563342.

Adhikari, N., & El Nokali, M. (1996). Investigation of the importance of high-level injection in abrupt HBTs. Solid-State Electronics, 39(7), 1021-1025.Elsevier BV. doi: 10.1016/0038-1101(95)00399-1.

Ahn, H., & El Nokali, M.A. (1996). A physically based approach for the calculation of the scattering parameters in high electron mobility transistors. International Journal of Electronics, 81(2), 149-158.Informa UK Limited. doi: 10.1080/002072196136814.

Ahn, H., & El Nokali, M. (1995). A charge based capacitance model for high electron mobility transistors. Solid-State Electronics, 38(4), 943-945.Elsevier BV. doi: 10.1016/0038-1101(94)00208-w.

Ahn, H.K., & El nokali, M. (1995). Inverse Modeling and Its Application to the Design of High Electron Mobility Transistors. IEEE Transactions on Electron Devices, 42(4), 598-604.

GUPTA, R., & ELNOKALI, M. (1995). A MODEL FOR DUAL-CHANNEL HIGH-ELECTRON-MOBILITY TRANSISTORS. SOLID-STATE ELECTRONICS, 38(1), 51-57.Elsevier BV. doi: 10.1016/0038-1101(94)E0069-Q.

Kasemsuwan, V., & El nokali, M. (1995). A DC Model for Fully Depleted SOI MOSFETS. International Journal of Electronics, 79(3), 281-292.

Ahn, H.K., & El nokali, M. (1994). An Analytical Model for High Electron Mobility Transistors. IEEE Transactions on Electron Devices, 41(6), 874-878.

AFZALI-KUSHAA, A., & EL-NOKALI, M. (1993). Modelling the MOS transistor. International Journal of Electronics, 74(2), 213-229.Informa UK Limited. doi: 10.1080/00207219308925828.

Dong, X., & El Nokali, M. (1993). Two-dimensional computer analysis of GaAs MESFETs. Solid-State Electronics, 36(4), 547-552.Elsevier BV. doi: 10.1016/0038-1101(93)90265-r.

Zhang, Y., & El nokali, M. (1993). A Hydrodynamic Simulator for Two-valley Semiconductor Devices. Special Issue of COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 12(4), 487-497.

Zhang, Y., & El Nokali, M. (1993). A hydrodynamic transport model and its applications in semiconductor device simulation. Solid-State Electronics, 36(12), 1689-1696.Elsevier BV. doi: 10.1016/0038-1101(93)90215-c.

Afzali-Kushaa, A., & El Nokali, M. (1992). Modeling subthreshold capacitances of MOS transistors. Solid-State Electronics, 35(1), 45-49.Elsevier BV. doi: 10.1016/0038-1101(92)90302-s.

Kushaa, A., & El nokali, M. (1992). Modelling Subthreshold Capacitances in MOS Transistors. Solid State Electronics, 47(2), 213-229.

XIA, Q., & EL NOKALI, M. (1991). MODFET DC model based on a new velocity-electric field characteristic. International Journal of Electronics, 71(1), 55-66.Informa UK Limited. doi: 10.1080/00207219108925458.

Gharabagi, R., & El nokali, M. (1990). A Quasi-Static Model for the Capacitances in Short Channel MOSFETs. International Journal of Electronics, 68, 181-193.

Gharabagi, R., & El Nokali, M. (1990). An analytical model for the capacitances in short-channel MOSFETs. Solid-State Electronics, 33(2), 235-241.Elsevier BV. doi: 10.1016/0038-1101(90)90162-8.

Gharabagi, R., & El-Nokali, M.A. (1990). A charge-based model for short-channel MOS transistor capacitances. IEEE Transactions on Electron Devices, 37(4), 1064-1073.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.52443.

Xia, Q., & El Nokali, M. (1990). An analytical d.c. model for MODFETs based on a new three-piece velocity-electric field characteristic. Solid-State Electronics, 33(9), 1179-1187.Elsevier BV. doi: 10.1016/0038-1101(90)90097-x.

Banna, M., & El nokali, M. (1989). A Quasi-Two-Dimensional Model for Small-Geometry MOSFETs Including the Source/Drain Resistances. International Journal of Electronics, 66, 589-600.

Banna, M., & El nokali, M. (1989). A Simple Analytical Model for Hot-Carrier MOSFETs. IEEE Transactions on Electron Devices, 36(4), 979-986.

Banna, M.E., & Nokali, M.E. (1989). A self-consistent model for short-channel mosfets. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2(2), 81-92.Wiley. doi: 10.1002/jnm.1660020204.

EL BANNA, M., & EL NOKALI, M. (1989). A quasi-two-dimensional model for small-geometry MOSFETs including the source/drain resistances. International Journal of Electronics, 66(4), 585-595.Informa UK Limited. doi: 10.1080/00207218908925413.

El-Banna, M., & El-Nokali, M. (1989). A simple analytical model for hot-carrier MOSFETs. IEEE Transactions on Electron Devices, 36(5), 979-986.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.299681.

Gharabagi, R., & El Nokali, M. (1989). A model for the intrinsic gate capacitances of short channel MOSFETs. Solid-State Electronics, 32(1), 57-63.Elsevier BV. doi: 10.1016/0038-1101(89)90048-8.

El Banna, M., & El Nokali, M. (1988). A pseudo-two-dimensional analysis of short channel MOSFETs. Solid-State Electronics, 31(2), 269-274.Elsevier BV. doi: 10.1016/0038-1101(88)90141-4.

LI, W., & ELNOKALI, M. (1988). CMOS LATCHUP MODELING - A NEW APPROACH. INTERNATIONAL JOURNAL OF ELECTRONICS, 64(2), 269-282.Informa UK Limited. doi: 10.1080/00207218808962801.

Escourrou, J., Delvaux, M., & el Nokali, M. (1987). [The laser and its uses in gastroenterology]. Soins Chir, (81), 21-24.

WEI, L., & ELNOKALI, M. (1987). A NEW MODEL FOR CMOS LATCH-UP. SOLID-STATE ELECTRONICS, 30(8), 885-887.Elsevier BV. doi: 10.1016/0038-1101(87)90018-9.

WEI, L., & ELNOKALI, M. (1987). TRANSIENT ANALYSIS FOR A NEW CMOS LATCHUP MODEL. SOLID-STATE ELECTRONICS, 30(12), 1331-1339.Elsevier BV. doi: 10.1016/0038-1101(87)90060-8.

El Banna, M., & El Nokali, M. (1986). On the transient response of a circular transducer. Wave Motion, 8(3), 235-241.Elsevier BV. doi: 10.1016/s0165-2125(86)80046-4.

El Nokali, M., & Miranda, H. (1986). A simple model for the MOS transistor in saturation. Solid-State Electronics, 29(6), 591-596.Elsevier BV. doi: 10.1016/0038-1101(86)90139-5.

Miranda, H., & El nokali, M. (1986). A Simple Two Sections Model for Short Channel MOS Transistors in Saturation. International Journal of Electronics, 61(4), 49-458.

MIRANDA, H., & EL NOKALI, M. (1986). Simple two-sections model for short channel MOS transistors in saturation. International Journal of Electronics, 61(4), 449-458.Informa UK Limited. doi: 10.1080/00207218608920887.

El Nokali, M.A. (1985). Theory of the p+n Diode SAW Storage Correlator in the Flash Mode. IEEE Transactions on Sonics and Ultrasonics, 32(5), 728-733.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/t-su.1985.31657.

El nokali, M., & Adler, E.L. (1984). Analysis of the SAW Schottky Diode Storage Correlator in the Flash Mode. IEEE Transactions on Sonics and Ultrasonics, (SU-31), 5-10.

El-Nokali, M., & Adler, E.L. (1980). A Modified Theory for SAW Memory Correlators. IEEE Transactions on Sonics and Ultrasonics, 27(1), 38-41.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/t-su.1980.31141.

El-Nokali, M., & Adler, E.L. (1979). Charge storage in s.a.w. memory correlators. Electronics Letters, 15(11), 323.Institution of Engineering and Technology (IET). doi: 10.1049/el:19790229.

El nokali, M., & Adler, E.L. (1977). A Simplified Theory for Semiconductor Coupled Surface Wave Convolvers. IEEE Transactions on Sonics and Ultrasonics, (SU-24), 218-221.

Shin, H., Kasemsuwan, V., Ahn, H., El Nokali, M., & Han, D.Y. (2006). Electrical analysis of step-up multi-layered piezoelectric transformer. In JOURNAL OF ELECTROCERAMICS, 17(2-4), (pp. 585-590).Springer Science and Business Media LLC. doi: 10.1007/s10832-006-0471-3.

Maddah, M., Bolouki, S., Afzali-Kusha, A., & Mahmoud El Nokali. (2002). A compact modeling of drain current in PD/FD SOI MOSFETs. In The 14th International Conference on Microelectronics,, 2002-January, (pp. 75-78).IEEE. doi: 10.1109/icm-02.2002.1161500.

Kasemsuwan, V., Ahn, H., & El Nokali, M. (1997). High frequency model for high electron mobility transistors. In Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials, 1, (pp. 480-482).

Ahn, H., & El Nokali, M.A. (1995). Microwave model for high electron mobility transistors. In Biennial University/Government/Industry Microelectronics Symposium - Proceedings, (pp. 182-186).

Gupta, R., & El Nokali, M. (1994). Small signal model for dual channel high electron mobility transistors. In Midwest Symposium on Circuits and Systems, 1, (pp. 678-681).

Casey, M., & El Nokali, M. (1993). Analytical delay model for BiCMOS inverters. In 1993 University/Government/Industry Microelectronics Symposium, (pp. 131-136).

Dong, X., Zhang, Y., & El Nokali, M. (1992). Modeling and simulation of GaAs MESFETs. In [1992] Proceedings of the 35th Midwest Symposium on Circuits and Systems, 1992-August, (pp. 1241-1244).IEEE. doi: 10.1109/mwscas.1992.271047.

Saleh, M., & El Nokali, M. (1992). A small-signal equivalent circuit for the high electron mobility transistor. In [Proceedings] 1992 IEEE International Symposium on Circuits and Systems, 3, (pp. 1364-1367).IEEE. doi: 10.1109/iscas.1992.230250.

El-Banna, M., & El Nokali, M. (1991). Effect of lateral-field distribution on hot-carrier analysis in short-channel MOSFETs. In [1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems, (pp. 799-802).IEEE. doi: 10.1109/mwscas.1991.251992.

El-Nokali, M., & Afzali-Kushaa, A. (1991). A subthreshold model for the analysis of MOS IC's. In Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium, (pp. 169-172).

Kushaa, A.A., & El Nokali, M. (1991). A CAD model for MOS transistors valid in all regions of operation. In [1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems, (pp. 364-367).IEEE. doi: 10.1109/mwscas.1991.252172.

Saleh, M., & El-Nokali, M. (1991). A DC model for the HEMT including the effect of parasitic conduction. In Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium, (pp. 164-168).

Saleh, M., & El-Nokali, M. (1991). A DC model for the high electron mobility transistor (HEMT). In [1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems, (pp. 360-363).IEEE. doi: 10.1109/mwscas.1991.252171.

Gharabagi, R., & El Nokali, M. (1989). Analytical model for short-channel MOSFET capacitances. (pp. 193-198).

El Banna, M., & El Nokali, M. (1986). NUMERICAL EVALUATION OF THE TRANSIENT PRESSURE OF A CIRCULAR TRANSDUCER USING THE FFT. In Modeling and Simulation, Proceedings of the Annual Pittsburgh Conference, 17(pt 4), (pp. 1341-1345).

Miranda, H., & El Nokali, M. (1986). SIMPLE MODEL FOR SHORT CHANNEL MOSFETS IN SATURATION. In Modeling and Simulation, Proceedings of the Annual Pittsburgh Conference, 17(pt 4), (pp. 1307-1310).

El Nokali, M.A. (1984). Analysis of the Gap-Coupled P-N-Diode Array/LiNbO3Storage Correlator in the Flash Mode. In IEEE 1984 Ultrasonics Symposium, 1984-November, (pp. 147-151).IEEE. doi: 10.1109/ultsym.1984.198280.

El Nokali, M., & Adler, E.L. (1983). Analysis of the SAW Schottky Diode Storage Correlator in the Flash-Mode. In 1983 Ultrasonics Symposium, 1, (pp. 387-391).IEEE. doi: 10.1109/ultsym.1983.198080.

Research interests

computer aided design
Microelectronics
Power electronics
Semiconductor device modeling
surface acoustic wave devices